Jump to content

Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions

← Older editNewer edit →
VisualWikitext
BGE (talk | contribs)
Bureaucrats, danchip, Administrators
2,908 edits
BGE (talk | contribs)
Bureaucrats, danchip, Administrators
2,908 edits
Line 4: Line 4:
Pernille V. Larsen @ Danchip and Berit G. Herstrøm @ Danchip.
Pernille V. Larsen @ Danchip and Berit G. Herstrøm @ Danchip.


{| {{table}}
{| {{table} border="1"
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''Title'''
| align="center" style="background:#f0f0f0;"|'''Title'''
| align="center" style="background:#f0f0f0;"|'''Sample description / measurement'''
| align="center" style="background:#f0f0f0;"|'''Sample description / measurement'''
| align="center" style="background:#f0f0f0;"|'''Acceptance criteria'''
| align="center" style="background:#f0f0f0;"|'''Acceptance criteria'''
|-
| ||||||
|-
|-
| 1||Patterned flat sample of silicon||Sample material: Patterned silicon substrate.||Depth 100±2 µm
| 1||Patterned flat sample of silicon||Sample material: Patterned silicon substrate.||Depth 100±2 µm
Line 27: Line 25:
|-
|-
| ||||Pattern size 20 µm x 20 µm, depth 500 nm||
| ||||Pattern size 20 µm x 20 µm, depth 500 nm||
|-
| ||||||
|-
|-
| 5||Flat sample of silicon with thick patterned oxide||Step height of patterned thick (10 µm) oxide on top of a silicon wafer.||Step height must be within ±3% of a SEM profile measurement.
| 5||Flat sample of silicon with thick patterned oxide||Step height of patterned thick (10 µm) oxide on top of a silicon wafer.||Step height must be within ±3% of a SEM profile measurement.
Line 47: Line 43:
|-
|-
| 8||Stitching of large area||Stitching 4 mm x 4 mm on same sample as in 7. The area consists of many closed packed honey comb formed membranes.||Membrane bow must the same as on 7 within 2%
| 8||Stitching of large area||Stitching 4 mm x 4 mm on same sample as in 7. The area consists of many closed packed honey comb formed membranes.||Membrane bow must the same as on 7 within 2%
|-
| ||||||
|-
|-
| 9||Narrow trenches and holes ||Sample material: Patterned silicon substrate.||Depth 20±2 µm
| 9||Narrow trenches and holes ||Sample material: Patterned silicon substrate.||Depth 20±2 µm
Line 55: Line 49:
|-
|-
| 10||Film thickness measurement of transparent thin film||Transparent thin film thickness of 28 nm SiO2 on Si||SiO2 thickness 28±1 nm  
| 10||Film thickness measurement of transparent thin film||Transparent thin film thickness of 28 nm SiO2 on Si||SiO2 thickness 28±1 nm  
|-
| ||||||
|-
|-
| 11||Measurements of multiple stacks||120 nm nitride on 110 nm oxide on a silicon substrate||Within ±2% on each layer from an ellipsometer measurement.  
| 11||Measurements of multiple stacks||120 nm nitride on 110 nm oxide on a silicon substrate||Within ±2% on each layer from an ellipsometer measurement.  
|-
| ||||||
|-
|-
| 12||Film thickness measurements of transparent films on small structure||Sample material: Si with 1.5 µm patterned AZ-resist||Within ±1% from a standard profiler measurement.
| 12||Film thickness measurements of transparent films on small structure||Sample material: Si with 1.5 µm patterned AZ-resist||Within ±1% from a standard profiler measurement.
Line 70: Line 60:
| ||||3 successive measurements of the roughness ||
| ||||3 successive measurements of the roughness ||
|-
|-
|
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Characterization/Profiler/Optical_Profiler_(Sensofar)_acceptance_test"