Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
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= | =Results for Si etching in the IBE= | ||
Best recipe with respect to the etch profile and low redeposition: | Best recipe with respect to the etch profile and low redeposition: |
Revision as of 11:58, 31 July 2012
Results for Si etching in the IBE
Best recipe with respect to the etch profile and low redeposition:
Parameter | Best Si etching recipe so fare |
---|---|
Neutalizer current [mA] | 450 |
RF Power [W] | 1200 |
Beam current [mA] | 400 |
Beam voltage [V] | 400 |
Beam accelerator voltage | 400 |
Ar flow to neutralizer [sccm] | 6.0 |
Ar flow to beam [sccm] | 6.0 |
Rotation speed [rpm] | 20 |
Stage angle [degrees] | 10 |
Results | vvv |
Etch rate [nm/min] | 15-30? |