Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions

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=results for Si etching in the IBE=
=Results for Si etching in the IBE=


Best recipe with respect to the etch profile and low redeposition:
Best recipe with respect to the etch profile and low redeposition:

Revision as of 11:58, 31 July 2012

Results for Si etching in the IBE

Best recipe with respect to the etch profile and low redeposition:

Parameter Best Si etching recipe so fare
Neutalizer current [mA] 450
RF Power [W] 1200
Beam current [mA] 400
Beam voltage [V] 400
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 6.0
Ar flow to beam [sccm] 6.0
Rotation speed [rpm] 20
Stage angle [degrees] 10
Results vvv
Etch rate [nm/min] 15-30?