Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
New page: =results for Si etching in the IBE= Best recipe so fare: {| border="2" cellspacing="2" cellpadding="3" !Parameter !Best Si etching recipe so fare |- |Neutalizer current [mA] |450 |- |RF ... |
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=results for Si etching in the IBE= | =results for Si etching in the IBE= | ||
Best recipe | Best recipe with respect to the etch profile and low redeposition: | ||
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!Parameter | !Parameter | ||
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|10 | |10 | ||
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|'''Results''' | |||
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|Etch rate [nm/min] | |||
|15-30? | |||
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