Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
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=Some general process trends= | =Some general process trends= | ||
This page is supposed to gather some general process trends and good advise for designing IBE recipes. | This page is supposed to gather some general process trends and good advise for designing IBE recipes. So far these trends has been developed etching Si with resist as masking material and by etcing some multilayered films. The work has been done by ''Kristian Hagsted Rasmussen @ Nanotech'' | ||
==Etch rate== | ==Etch rate== | ||
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==Etch profile== | ==Etch profile== | ||
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|Beam voltage | |Beam voltage | ||
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==Rotation speed== | ==Rotation speed== | ||
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