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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions

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|not significantly effected by
|not significantly effected by
|Beam voltage
|Beam voltage
|-
==Rotation speed==
The rotation is activated to get a good uniformity over the wafer. The minimum number of rotation to get a good uniformity is 100 rotation for the hole etch. the maximum rotation speed is 20rpm. That means that an etch shorter that 5min cannot obtain a very good uniformity.
{| border="2" cellspacing="2" cellpadding="3"
!Etch Length [min]
!5
!6
!7
!8
!9
!10
!15
!20
!25
!34
!50
!100
|-
|Minimum rotation speed [rpm]
|20
|17
|15
|13
|12
|10
|7
|5
|4
|3
|2
|1
|-
|-