Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
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==Rotation speed== | |||
The rotation is activated to get a good uniformity over the wafer. The minimum number of rotation to get a good uniformity is 100 rotation for the hole etch. the maximum rotation speed is 20rpm. That means that an etch shorter that 5min cannot obtain a very good uniformity. | |||
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!Etch Length [min] | |||
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!20 | |||
!25 | |||
!34 | |||
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!100 | |||
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|Minimum rotation speed [rpm] | |||
|20 | |||
|17 | |||
|15 | |||
|13 | |||
|12 | |||
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|1 | |||
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Revision as of 11:01, 31 July 2012
Some general process trends
This page is supposed to gather some general process trends and good advise for designing IBE recipes.
Etch rate
Etch rate | Parameters |
---|---|
increases with | Beam current |
increases with | Beam voltage |
increases with | Beam current * Beam voltage |
not significantly effected by | Stage angle |
not significantly effected by | Accelerator voltage |
Etch profile
Rotation speed
The rotation is activated to get a good uniformity over the wafer. The minimum number of rotation to get a good uniformity is 100 rotation for the hole etch. the maximum rotation speed is 20rpm. That means that an etch shorter that 5min cannot obtain a very good uniformity.
Etch profile (goal 90dg) | Parameters |
---|---|
improves with | Low stage angle (optimum around 5-10 dg) |
is effected by | Beam current (low I(B)(400mA) better than high I(B)(600mA)) |
is effected by | Accelerator voltage * Stage angle |
not significantly effected by | Beam voltage |
Etch Length [min] | 5 | 6 | 7 | 8 | 9 | 10 | 15 | 20 | 25 | 34 | 50 | 100 |
---|---|---|---|---|---|---|---|---|---|---|---|---|
Minimum rotation speed [rpm] | 20 | 17 | 15 | 13 | 12 | 10 | 7 | 5 | 4 | 3 | 2 | 1 |