Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions
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*Process develop | *Process develop | ||
**[[/Etch slow|Etch slow: resist can be removed with actone after etch]] | **[[/Etch slow|Etch slow: resist can be removed with actone after etch]] | ||
**[[/IBE Si etch|Si etching using AZ-resist at masking material]] | |||
===Deposition=== | ===Deposition=== | ||