Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions
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|etch time [min] | |etch time [min] | ||
Revision as of 09:48, 31 July 2012
Etch slow
This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
| Parameter | Si etch first try |
|---|---|
| Neutalizer current [mA] | 450 |
| RF Power [W] | 1200 |
| Beam current [mA] | 400 |
| Beam voltage [V] | 400 |
| Beam accelerator voltage | 400 |
| Ar flow to neutralizer [sccm] | 6.0 |
| Ar flow to beam [sccm] | 6.0 |
| Rotation speed [rpm] | 20 |
| Stage angle [degrees] | 10 |
| Platen temp. [dg. Celcius] | 15 |
| He cooling pressure [mTorr] | 37.5 |
| Results | vvv |
| etch time [min] | 40 |
| Etch rate in Si [nm/min] | 19.7 |
| Total time in Acetone + ultrasound [min] | 17 |
| Was the resist completely removed after acetone + ultrasound? | no |