Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow

Etch slow

This process development is going on to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.

Parameter	Si etch first try
Neutalizer current [mA]	450
RF Power [W]	1200
Beam current [mA]	400
Beam voltage [V]	400
Beam accelerator voltage	400
Ar flow to neutralizer [sccm]	6.0
Ar flow to beam [sccm]	6.0
Rotation speed [rpm]	20
Stage angle [degrees]	10
Platen temp. [dg. Celcius]	15
He cooling pressure [mTorr]	37.5
Results	vvv
etch time [min]	40
Etch rate in Si [nm/min]	19.7
Total time in Acetone + ultrasound [min]	17
Was the resist completely removed after acetone + ultrasound?	no