Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
Appearance
No edit summary |
|||
| Line 30: | Line 30: | ||
|Line scan x: 50µm to 200mm | |Line scan x: 50µm to 200mm | ||
|Depending on objective: | |Depending on objective: | ||
*One view: 127µmX95µm | *One view: 127µmX95µm to 1270µmX955µm | ||
*Stitching: In principel a hole 6" wafer (time consuming) | *Stitching: In principel a hole 6" wafer (time consuming) | ||
|90 µm square | |90 µm square | ||