Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Jml (talk | contribs)
Bureaucrats, danchip, Administrators
1,918 edits
No edit summary
Line 167: Line 167:
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
!Recipe
!Recipe
!nano1.0
!
!nano1.1
!
!nano1.2
!
!nano1.3
!
!nano1.21
!
!nano1.4
!
!nano1.41
!
!nano1.42
!
!nano1.43
!
!
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
!C<sub>4</sub>F<sub>8</sub> (sccm)
|52
|
|52
|
|52
|
|52
|
|75
|
|75
|
|75
|
|75
|
|75
|
|
|-
|-
!SF<sub>6</sub> (sccm)
!SF<sub>6</sub> (sccm)
|38
|
|38
|
|38
|
|38
|
|38
|
|38
|
|38
|
|38
|
|38
|
|-
|-
!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|0
|
|0
|
|0
|
|0
|
|0
|
|0
|
|0
|
|0
|
|0
|
|-
|-
! Coil power (W)
! Coil power (W)
|800 (F)
|
|600 (F)
|
|800 (F)
|
|600 (F)
|
|800 (F)
|
|800 (F)
|
|800 (F)
|
|800 (F)
|
|800 (F)
|
|-
|-
!Platen power (W)
!Platen power (W)
|50
|
|50
|
|50
|
|40
|
|50
|
|50
|
|75
|
|40
|
|30
|
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
|4
|
|4
|
|4
|
|4
|
|4
|
|4
|
|4
|
|4
|
|4
|
|-
|-
! Temperature (degs C)
! Temperature (degs C)
| 10
|
| 10
|
| -10
|
| -10
|
| -10
|
| -20
|
| -20
|
| -20
|
| -20
|
|-
|-
! Process time (s)
! Process time (s)
|120
|
|120
|
|120
|
|120
|
|120
|
|120
|
|120
|
|120
|
|120
|
|-
|-
! colspan="10" align="center"| Etch rates (nm/min)
! colspan="10" align="center"| Etch rates (nm/min)

Revision as of 10:17, 19 June 2012

Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (F) 600 (F) 800 (F) 600 (F) 800 (F) 800 (F) 800 (F) 800 (F) 800 (F)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Etch rates (nm/min)
Averages 295 228 299 235 183 183 166 160 148
Std. Dev 36 29 37 20 9 9 9 8 6
Zep etch rate (nm/min)
172 95 94 69 67 101 65 55
Sidewall angle (degrees)
Averages 93 94 92 94 91 91 90 90 90
Std. Dev 1 1 0 1 0 0 1 0 0
CD loss (nm pr edge)
Averages -11 -13 -17 -10 -10 -10 -20 -13 -24
Std. Dev 12 10 11 14 15 15 16 15 21
Bowing (nm)
Averages 31 42 13 16 6 6 3 -3 0
Std. Dev 7 6 4 3 2 2 2 3 1
Bottom curvature
Averages -45 -45 -44 -43 -32 -32 -34 -32 -39
Std. Dev 5 7 4 9 10 10 9 8 9
Images Images Images Images Images Images Images Images Images Images









Recipe
C4F8 (sccm)
SF6 (sccm)
O2 (sccm)
Coil power (W)
Platen power (W)
Pressure (mtorr)
Temperature (degs C)
Process time (s)
Etch rates (nm/min)
Averages . . . . . . . . .
Std. Dev . . . . . . . . .
Zep etch rate (nm/min)
. . . . . . . . .
Sidewall angle (degrees)
Averages . . . . . . . . .
Std. Dev . . . . . . . . .
CD loss (nm pr edge)
Averages . . . . . . . .
Std. Dev . . . . . . . .
Bowing (nm)
Averages . . . . . . . .
Std. Dev . . . . . . . .
Bottom curvature
Averages . . . . . . . . .
Std. Dev . . . . . . . . .
Images Images Images Images Images Images Images Images Images Images
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch&oldid=6261"