Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
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{| border="2" cellspacing="1" cellpadding="3" align="left" | {| border="2" cellspacing="1" cellpadding="3" align="left" | ||
!Depostion time | !Depostion time | ||
!10 min | !10 min (before 2013) | ||
!30 min | !30 min (before 2013) | ||
!30 min | !30 min (before 2013) | ||
!30 min (2013-10-4) | |||
|- | |- | ||
|Characterization method | |Characterization method | ||
|FilmTek | |FilmTek | ||
|FilmTek | |FilmTek | ||
|Ellipsometer 3 angles | |||
|Ellipsometer 3 angles | |Ellipsometer 3 angles | ||
|- | |- | ||
| Line 55: | Line 57: | ||
|229 nm | |229 nm | ||
|242 nm | |242 nm | ||
|194 nm (2013-10-4) | |||
|- | |- | ||
|Deposition rate | |Deposition rate | ||
| Line 60: | Line 63: | ||
|7.6 nm/min | |7.6 nm/min | ||
|8.1 nm/min | |8.1 nm/min | ||
|6.5 nm/min | |||
|- | |- | ||
|Refractive index @632nm | |Refractive index @632nm | ||
| Line 71: | Line 75: | ||
n=4.589 <br/> | n=4.589 <br/> | ||
k=0.479 | k=0.479 | ||
| | |||
n=4.625 <br/> | |||
k=0.653 | |||
|- | |- | ||
|Refractive index @1000nm <br/> | |Refractive index @1000nm <br/> | ||
| Line 83: | Line 90: | ||
n=4.136 <br/> | n=4.136 <br/> | ||
k=0.189 | k=0.189 | ||
| | |||
n=4.206 <br/> | |||
k=0.183 | |||
|- | |||
|Refractive index @1000nm <br/> | |||
@1550nm using the ellipsometer | |||
| | |||
n=? <br/> | |||
k=? | |||
| | |||
n=? <br/> | |||
k=? | |||
| | |||
n=? <br/> | |||
k=? | |||
| | |||
n=3.970 <br/> | |||
k=0.062 | |||
|- | |- | ||
|Roughness | |Roughness | ||
| Line 88: | Line 113: | ||
|10.4 nm | |10.4 nm | ||
|1.1 nm | |1.1 nm | ||
|0.9 nm | |||
|- | |- | ||
|} | |} | ||
<br clear="all" /> | <br clear="all" /> | ||