Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

Revision as of 21:24, 12 February 2012

The ICP Metal Etcher in short

Despite its name the metal etcher doesn't etch metals in general. Currently, the list of metals that you can etch is quite short:

aluminium
titanium
titanium tungsten
chromium

Over time it is our intention to add other materials to the list such as molybdenum, tungsten, titaniumtungsten, titaniumoxides or piezo-materials such as ZnO. However, currently you are not even allowed to expose other metals to the plasma. To etch other metals use the IBE/IBSD Ionfab 300.

Recipes on the Metal Etcher

Aluminium etch

The aluminium etch has two steps:

Breakthrough: The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.

Main: The main step etches bulk aluminium.

**Al etch**
Parameter	Process step
Parameter	Breakthrough	Main
Time (secs)	20	40 (variable)
HBr (sccm)	-	15
Cl₂ (sccm)	20	25
Pressure (mTorr)	2, Strike 3 secs @ 15 mTorr???	1
Coil power (W)	600	500
Platen power (W)	125	100
Temperature (^oC)	20	20
Spacers (mm)	30	30

Titanium etch

**Ti etch**
Parameter	Process 1	Process 2
Cl₂ (sccm)	30	30
HBr (sccm)	-	-
Pressure (mTorr)	3, Strike 3 secs @ 15 mTorr???	3
Coil power (W)	800	900
Platen power (W)	100	50
Temperature (^oC)	20	20
Spacers (mm)	30	30
Etch rate (nm/min)	152	64
AZ resist selectivity	0.67	0.83

Chromium etch

The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.

**Cr etch**
Parameter	Cr etch
Cl₂ (sccm)	65
O₂ (sccm)	15
Pressure (mTorr)	15
Coil power (W)	300
Platen power (W)	15
Temperature (^oC)	50 (no back side cooling)
Spacers (mm)	100
Etch rate (nm/min)	~14
Zep520A resist selectivity	~0.9
Comment	.

Etching of nanostructures in silicon

A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are:

Substrates: A pattern containing 30 nm, 60 nm, 90 nm, 120 nm and 150 nm wide lines has been transferred using E-beam lithography onto three separate batches of 2" wafers (with three different thicknesses of zep resist). In order to make sure that the narrowest features are fully opened they are intentionally over-exposed in the E-beam writer (400 muC/cm2) causing the lines to widen. The resist profiles of the three batches are:

The exposed area is very small. The 211 nm batch has the same lines distributed in a different way that allows you monitor the progress of the etch in three different durations by cleaving off a piece of the wafer 3 times. After E-beam exposure the wafers have been developed: N50 for 2 minutes followed by 30 seconds of IPA.

Substrate mounting: The 2" wafers are mounted with crystalbond in the center of 4" Si carriers that have an oxide layer facing the plasma.

Conditioning the process chamber

Recipe Sinano	3.0	3.1	3.2	3.3	3.4	4.0	3.5	3.6	3.3	3.7	3.31	3.31	3.32
Cl₂ (sccm)	0	0	0	0	0	20	15	15	0	0	0	0	0
BCl₃ (sccm)	5	3	5	5	5	0	5	5	5	5	5	5	5
HBr (sccm)	15	17	15	15	15	0	0	0	15	15	15	15	15
Coil power (W)	900 L	900 F	900 F	900 F	900 F	900 L	900 L	900 F	900 F	900 L	900 F	900 F	900 F
Platen power (W)	50	50	60	75	90	60	60	60	75	60	75	75	30
Pressure (mtorr)	2	2	2	2	2	2	5	10	2	10	2	2	2
Temperature (^oC)	20	20	20	20	20	20	20	20	20	50	50	50	50
Spacers (mm)	100	100	100	100	100	100	100	100	100	100	100	30	100
Process time (s)	150	180	120	180	120	90	120	180	300	180	180	180	180
Etch rates (nm/min)
Averages	311	104	92	105	116	169	108	79	101	66	91	98	59
Std. Dev	44	15	15	21	22	9	11	31	29	4	28	18	12
Zep etch rate (nm/min)
		30	40	51	67			45	59		53	36	19
Sidewall angle (degrees)
Averages	82	82	82	82	82	84	81	83	83	85	80	83	79
Std. Dev	2	2	1	1	1	1	1	2	2	1	3	2	2
CD loss (nm pr edge)
Averages	65	-11	-15	-2	-11	67	63	-29	-5	-29	10	-14	-17
Std. Dev	30	5	2	4	3	29	27	6	5	8	7	8	10
Bowing (nm)
Averages	31	31	15	6	5	22	12	15	28	13	25	1	-2
Std. Dev	6	7	3	6	4	5	2	6	9	7	5	2	2
Bottom curvature
Averages	-9	-6	-9	-11	-9	9	-4	-8	-24	-2	-9	-13	-10
Std. Dev	22	19	19	11	7	17	15	15	12	15	13	17	18

@@ Line 4: / Line 4: @@
 * aluminium
 * titanium
+* titanium tungsten
 * chromium
 Over time it is our intention to add other materials to the list such as molybdenum, tungsten, titaniumtungsten, titaniumoxides or piezo-materials such as ZnO. However, currently you are not even allowed to expose other metals to the plasma. To etch other metals use the [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE/IBSD Ionfab 300]].