Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions

Revision as of 10:50, 5 January 2012

Acceptance test for Ti etch:

.	Acceptance Criteria	Acceptance Results
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	.
Material to be etched	E-beam deposited Ti	.
Mask information	E-beam resist mask: 400nm of spin coated ZEP520A e-beam resist Patterned by E-beam lithography	.
Features to be etched	300nm - 3µm dots and lines + a square of 200µmx200µm	.
Etch depth	300nm	~270 nm
Etch rate	>80nm/min	22nm/min +- 0.3nm/min (one standard deviation)
Etch rate uniformity	<+-2%	+-(0.2% +-0.2%)
Reproducibility	<+-2%	+-(0.8% +-0.5%)
Selectivity (Au etch rate/ZEP etch rate)	At least 1:1	0.7:1
Etch profile	70-90dg.	~65dg @270nm ~77dg @123nm

Ti s10-4: 270nm deep - 500nm line. all zep has gone. Profile: ~65 dg.	Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.	Ti S7 5: 123nm deep - 300nm line. Still zep left. Profile: ~77 dg

@@ Line 73: / Line 73: @@
 {| border="2" cellspacing="2" cellpadding="3"
 !Parameter
-!Au etch acceptance
+!Ti etch acceptance
 |-
 |Neutalizer current [mA]
@@ Line 79: / Line 79: @@
 |-
 |RF Power [W]
-|1300
+|1200
 |-
 |Beam current [mA]
@@ Line 91: / Line 91: @@
 |-
 |Ar flow to neutralizer [sccm]
-|5.0
+|6.0
 |-
 |Ar flow to beam [sccm]
-|10.0
+|6.0
 |-
 |Rotation speed [rpm]
@@ Line 100: / Line 100: @@
 |-
 |Stage angle [degrees]
-|30
+|20
 |-
 |}
@@ Line 107: / Line 107: @@
-===Some SEM profile images of the etched Au===
+===Some SEM profile images of the etched Ti===
 {| border="1" cellspacing="1" cellpadding="2"
 !