Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions
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!Parameter | !Parameter | ||
! | !Ti etch acceptance | ||
|- | |- | ||
|Neutalizer current [mA] | |Neutalizer current [mA] | ||
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|- | |- | ||
|RF Power [W] | |RF Power [W] | ||
| | |1200 | ||
|- | |- | ||
|Beam current [mA] | |Beam current [mA] | ||
| Line 91: | Line 91: | ||
|- | |- | ||
|Ar flow to neutralizer [sccm] | |Ar flow to neutralizer [sccm] | ||
| | |6.0 | ||
|- | |- | ||
|Ar flow to beam [sccm] | |Ar flow to beam [sccm] | ||
| | |6.0 | ||
|- | |- | ||
|Rotation speed [rpm] | |Rotation speed [rpm] | ||
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|- | |- | ||
|Stage angle [degrees] | |Stage angle [degrees] | ||
| | |20 | ||
|- | |- | ||
|} | |} | ||
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===Some SEM profile images of the etched | ===Some SEM profile images of the etched Ti=== | ||
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! | ! | ||