Specific Process Knowledge/Characterization/XPS: Difference between revisions

Revision as of 10:45, 20 October 2011 view source Kn (talk \| contribs) danchip 979 edits →Depth profiling ← Older edit		Revision as of 10:46, 20 October 2011 view source Kn (talk \| contribs) danchip 979 edits →Depth profiling Newer edit →
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	The analysis is made on a chosen spot on the sample surface (choosen with the system camera). The technique, is as written above, very surface sensitive and probes only the top nanometers of the sample.		The analysis is made on a chosen spot on the sample surface (choosen with the system camera). The technique, is as written above, very surface sensitive and probes only the top nanometers of the sample.

	With the ion beam gun on the system a etch of the sample can be done. The system measures the desired spectra, do a etch step and measures again. A series of etch cycles can be set up, measuring the composition of the sample ~~through~~ at different depths.		With the ion beam gun on the system a etch of the sample can be done. The system measures the desired spectra, do a etch step and measures again. A series of etch cycles can be set up, measuring the composition of the sample at different depths through the film.