Specific Process Knowledge/Characterization/XPS: Difference between revisions
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===Elemental composition=== | ===Elemental composition=== | ||
[[image:Overview spectra Labadvisor.JPG| | [[image:Overview spectra Labadvisor.JPG|420x420px|left|thumb|XPS spectrum of a sample consisting of the elements silicon, oxygen and carbon.]] | ||
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[[image:Si spectra Labadvisor.JPG| | [[image:Si spectra Labadvisor.JPG|420x420px|left|thumb|XPS Si2p spectrum of Si sample]] | ||
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===Depth profiling=== | ===Depth profiling=== | ||
[[Image:Stochiometry 20110510.JPG| | [[Image:Stochiometry 20110510.JPG|425x425px|left|thumb|Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite constant through the film. Measurements done with XPS-ThermoScientific ]] | ||
The analysis is made on a chosen spot on the sample surface (detected with the system camera). The technique, is as written above, very surface sensitive and probes only the top nanometers of the sample. | |||
With the ion beam gun on the system a etch of the sample can be done. The system measures the desired spectra, do a etch step and measures the again. A series of etch cycles can be set up, measuring the composition of the sample through at different depths. | |||
'''Example: NiCr film''' | |||
As an illustration, a figure to the left, shows an elemental analysis through a metallic film consisting of Ni and Cr. The metallic layer was about 70 nm thick, and the atomic percentage of Ni and Cr was measured through the layer. | |||
In the graph, you see the atomic % as a function of etch depth, and it is possible to detect that the relationship between Ni and Cr is fairly constant through the metallic film. | |||