Specific Process Knowledge/Characterization/XPS: Difference between revisions
Appearance
No edit summary |
|||
| Line 19: | Line 19: | ||
===Elemental composition=== | |||
[[image:Overview spectra Labadvisor.JPG|350x350px|left|thumb|XPS spectrum of a sample consisting of the elements silicon, oxygen and carbon.]] | [[image:Overview spectra Labadvisor.JPG|350x350px|left|thumb|XPS spectrum of a sample consisting of the elements silicon, oxygen and carbon.]] | ||
| Line 38: | Line 38: | ||
===Chemical state=== | |||
[[image:Si spectra Labadvisor.JPG|350x350px|left|thumb|XPS Si2p spectrum of Si sample]] | [[image:Si spectra Labadvisor.JPG|350x350px|left|thumb|XPS Si2p spectrum of Si sample]] | ||
| Line 67: | Line 68: | ||
===Depth profiling=== | |||
[[Image:Stochiometry 20110510.JPG|350x350px|left|thumb|Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite stabel through the film. Measurements done with XPS-ThermoScientific ]] | [[Image:Stochiometry 20110510.JPG|350x350px|left|thumb|Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite stabel through the film. Measurements done with XPS-ThermoScientific ]] | ||