Specific Process Knowledge/Characterization/XPS

XPS-ThermoScientific

A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific.

Elemental analysis

The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page Element analysis.

XPS technique

XPS is a surface sensitive and non destructive technique used for elemental composition analysis.

In the XPS spectrometer system the probed samples are irradiated by photons with a specific energy, and the photoelectrons that leaves the sample are detected. The energy levels of the electrons are elemental specific, and by measuring the energy of the outgoing electrons, it is possible to detect which elements that are present in a sample.

The technique can be used for different purposes:

Elemental composition

XPS spectrum of a sample consisting of the elements silicon, oxygen and carbon.

Each element give a specific "finger-print" in the XPS spectrum. The electrons in the atoms have different binding energies for all elements, and when measuring a photoelectron spectrum over a wide range of energies, the main line from each element will be placed at a specific energy in the spectra.

Here is shown a spectra measured over the energy range 0-1350 eV, and characteristic lines from three elements (C,O and Si) are seen and indicated in the spectrum.

The instrument program can use this information to give an estimate of the sample composition, giving the atomic procentage of the different elements.

Chemical state

XPS Si2p spectrum of Si sample

Depth profiling

Stochiometry as a function of film depth (etch time). The relationship between Cr and Ni is quite stabel through the film. Measurements done with XPS-ThermoScientific

A rough overview of XPS-ThermoScientific characteristics

Purpose	Chemical analysis	Probing elemental composition Chemical state identification Non destructive technique Surface sensitive Depth profiling possible by ion beam etch of sample
Performance	Spot size	Can be set between 30µm - 400µm
	Probing depth	Depending on probed element. Max probe depth lies within 10-200 Å.
	Resolution	Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
	Charge compensation	Flood gun can be used for charge compensation of non conductive samples
	Finding structures	Choose measuring spot from camera image (magnified)
Depth profiling	Purpose	With ion beam etch the top layer of the material can be removed, to do a depth profiling
	Ion beam size	About 0,3x1 mm
Substrates	Substrate size	Max 60x60 mm
	Substrate thickness	Max height about 20 mm