Specific Process Knowledge/Characterization/XPS: Difference between revisions
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==XPS technique== | ==XPS technique== | ||
[[image:Si spectra Labadvisor.JPG|300x300px|right|thumb|XPS Si2p spectrum of Si sample]] | |||
[[image:Si spectra Labadvisor.JPG|300x300px|right|thumb|XPS Si2p spectrum of Si sample]] | [[image:Si spectra Labadvisor.JPG|300x300px|right|thumb|XPS Si2p spectrum of Si sample]] | ||
Revision as of 15:05, 17 October 2011
XPS-ThermoScientific
A X-ray Photoecectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, and is found in LabManager under the name XPS-ThermoScientific.
Elemental analysis
The XPS technique can be used to do elemental analysis. A comparision about techniques and intsrumens used for elemental analysis at Danchip can be found on the page Element analysis.
XPS technique
XPS is a surface sensitive and non destructive technique used for elemental composition analysis.
A rough overview of XPS-ThermoScientific characteristics
| Purpose | Chemical analysis |
|
|---|---|---|
| Performance | Spot size | Can be set between 30µm - 400µm |
| Probing depth | Depending on probed element. Max probe depth lies within 10-200 Å. | |
| Resolution | Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected. | |
| Charge compensation |
Flood gun can be used for charge compensation of non conductive samples | |
| Finding structures | Choose measuring spot from camera image (magnified) | |
| Depth profiling | Purpose | With ion beam etch the top layer of the material can be removed, to do a depth profiling |
| Ion beam size | About 0,3x1 mm | |
| Substrates | Substrate size |
Max 60x60 mm |
| Substrate thickness |
Max height about 20 mm |