Specific Process Knowledge/Characterization/XPS: Difference between revisions

Revision as of 14:03, 17 October 2011

XPS

See more about elemental analysis on the side Element analysis

Purpose	Chemical analysis	Probing elemental composition Chemical state identification Non destructive technique Surface sensitive Depth profiling possible by ion beam etch of sample
Performance	Spot size	Can be set between 30µm - 400µm
	Probing depth	Depending on probed element. Max probe depth lies within 10-200 Å.
	Resolution	Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
	Charge compensation	Flood gun can be used for charge compensation of non conductive samples
	.	µm
Depth profiling	Purpose	With ion beam etch the top layer of the material can be removed, to do a depth profiling
	Ion beam size	About 0,5x1 mm
Substrates	Substrate size	Max 60x60 mm
	Substrate thickness	Max height about 20 mm

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+|style="background:WhiteSmoke; color:black"|With ion beam etch the top layer of the material can be removed, to do a depth profiling
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+|style="background:LightGrey; color:black"|Ion beam size
+|style="background:WhiteSmoke; color:black"| About 0,5x1 mm
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-* Max 60x60 mm
+Max 60x60 mm
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-* Max height about 20 mm
+Max height about 20 mm
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