Specific Process Knowledge/Back-end processing/Wire Bonder: Difference between revisions

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==TPT Wire Bonder==
==TPT Wire Bonder==
[[Image:TPTWireBonder.jpg|300x300px|thumb|TPT Wire Bonder, Packlab, Building 347, 2nd floor]]
[[Image:TPTwirebonder_wedge_ball.jpg|300x300px|thumb|Wire bondings: Left: wedge bonding - Right: ball bonding]]


The TPT Wire Bonder is a new machine bought i 2007. Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.  
The TPT Wire Bonder is a new machine bought i 2007. Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.  


'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:'''
<!-- remember to remove the type of documents that are not present -->


Please be aware that the bonder only is operated by Danchip personal.
[[Image:TPTWireBonder.jpg|300x300px|thumb|TPT Wire Bonder, Packlab, Building 347, 2nd floor]]
[[Image:TPTwirebonder_wedge_ball.jpg|300x300px|thumb|Wire bondings: Left: wedge bonding - Right: ball bonding]]


<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=238 TPT Wire Bonder]


<!-- == Process information ==


*[[Specific Process Knowledge/Back-end processing/Au-Sn eutectic die bonding|Au-Sn eutectic die bonding]]
-->


===Wedge Bonding===
==Equipment performance and process related parameters==
*Gold wire 25 µm wire.
*Aluminium wire 25 µm wire.
*Min. bonding area 200 µm.


{| border="2" cellspacing="0" cellpadding="2"


===Ball Bonding===
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
Ball bonding gives free choice of bonding direction. First bond forms a small ball and second bond is a wedge bond.
|style="background:WhiteSmoke; color:black"|<b>TPT Wire Bonder</b>
|style="background:WhiteSmoke; color:black"|<b>Ball Wire Bonder</b>
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al and Au 25µm wire bonding
*Wedge and ball wire bonding
* Au ribbon (100x20µm) bonding<br />(we have tools and wire but it has not been tested)
|style="background:WhiteSmoke; color:black"|
*Au 25µm wire bonding
*Ball wire bonding
|-
!style="background:silver; color:black;" align="center" width="60"|Performance
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Manual operation
*Wedge bonding:
**recommended min. bonding area 200 µm
*Ball bonding:  
**recommended min. bonding area 300 µm
**recommended temperature 120 <sup>o</sup>C.
|style="background:WhiteSmoke; color:black"|
*Semi-automatic and manual operation
*Bond placement laser pointer
*recommended min. bonding area 100 µm
*recommended temperature 120 <sup>o</sup>C.
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Allowed materials
|colspan="2" style="background:WhiteSmoke; color:black"|
*Should be able to withstand the wire bonding temperature
*Typical materials are: Alumina (Al2O3), AluminumNitride (AlN), std. circuit boards (FR4)
|-
|}


*Gold only 25 µm wire.
<br clear="all" />
*Min. bonding pad 300 µm.
*Sample withstand heating to 120 <sup>o</sup>C.

Revision as of 15:46, 6 May 2013

Feedback to this page: click here

TPT Wire Bonder

The TPT Wire Bonder is a new machine bought i 2007. Wire bonding is a method of making interconnections between a microchip and other electronics as part of semiconductor device fabrication. The TPT-H05 is a manuel wire bonder.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

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TPT Wire Bonder, Packlab, Building 347, 2nd floor
Wire bondings: Left: wedge bonding - Right: ball bonding

TPT Wire Bonder


Equipment performance and process related parameters

Equipment TPT Wire Bonder Ball Wire Bonder
Purpose
  • Al and Au 25µm wire bonding
  • Wedge and ball wire bonding
  • Au ribbon (100x20µm) bonding
    (we have tools and wire but it has not been tested)
  • Au 25µm wire bonding
  • Ball wire bonding
Performance
  • Manual operation
  • Wedge bonding:
    • recommended min. bonding area 200 µm
  • Ball bonding:
    • recommended min. bonding area 300 µm
    • recommended temperature 120 oC.
  • Semi-automatic and manual operation
  • Bond placement laser pointer
  • recommended min. bonding area 100 µm
  • recommended temperature 120 oC.
Substrates Allowed materials
  • Should be able to withstand the wire bonding temperature
  • Typical materials are: Alumina (Al2O3), AluminumNitride (AlN), std. circuit boards (FR4)