Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
Appearance
| Line 70: | Line 70: | ||
| Photo resist | | Photo resist | ||
| 12-13 % on 6" wafer | | 12-13 % on 6" wafer | ||
| | | | ||
| | | | ||
|- | |- | ||
! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processB|Process B]] | ! [[Specific Process Knowledge/Etch/DRIE-Pegasus/processB|Process B]] | ||