Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
| Line 106: | Line 106: | ||
*SiH<sub>4</sub>:0-60 sccm | *SiH<sub>4</sub>:0-60 sccm | ||
*N<sub>2</sub>O:0-3000 sccm | *N<sub>2</sub>O:0-3000 sccm | ||
*NH<sub>3</sub>:0- | *NH<sub>3</sub>:0-300 sccm | ||
*N<sub>2</sub>:0-3000 sccm | *N<sub>2</sub>:0-3000 sccm | ||
*Ar:0-1000 sccm | *Ar:0-1000 sccm | ||
*5%PH<sub>3</sub>:0-100 sccm | *5%PH<sub>3</sub>:0-100 sccm | ||
*3%B<sub>2</sub>H<sub>6</sub>:0-850 sccm | *3%B<sub>2</sub>H<sub>6</sub>:0-850 sccm | ||