|
|
| Line 76: |
Line 76: |
| *NMP (Remover 1165) | | *NMP (Remover 1165) |
| *IPA (rinsing agent) | | *IPA (rinsing agent) |
| | |- |
| | ! scope=row style="text-align: left;" | Process temperature |
| | | Up to ~100°C |
| | | Up to ~100°C |
| | | Up to ~100°C |
| | | Up to ~65°C |
| | | Up to ~65°C |
| |- | | |- |
| ! scope=row style="text-align: left;" | Process time | | ! scope=row style="text-align: left;" | Process time |
| Line 137: |
Line 144: |
| | | | | |
| *Silicon substrates | | *Silicon substrates |
| *III-V substrates | | *III-V substrates (only on Si carrier) |
| *Glass substrates | | *Glass substrates |
| *Polymer substrates | | *Polymer substrates |
| *Films, or patterned films, of any material except type IV (Pb, Te) | | *Films, or patterned films, of any material except type IV (Pb, Te) |
| | | | | |
| *<span style="color:red">'''No metals'''</span><br> | | *<span style="color:red">'''No iron (Fe) containing films'''</span> |
| *<span style="color:red">'''No metal oxides'''</span><br>
| |
| *Silicon substrates | | *Silicon substrates |
| *III-V substrates | | *III-V substrates |
| *Glass substrates | | *Glass substrates |
| *Polymer substrates | | *Polymer substrates |
| *Films, or patterned films, of resists/polymers | | *Films, or patterned films, of any material except type IV (Pb, Te) |
| | | | | |
| | *<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span> |
| *Silicon substrates | | *Silicon substrates |
| *III-V substrates (only if clean) | | *III-V substrates (only if clean) |
| Line 156: |
Line 163: |
| |} | | |} |
| <br clear="all" /> | | <br clear="all" /> |
|
| |
| <!--
| |
| = Plasma Ashing process parameters=
| |
|
| |
| {| class="wikitable"
| |
| |-
| |
| ! !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
| |
| |-
| |
| ! scope=row style="text-align: left;" | Tool
| |
| | Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
| |
| |-
| |
| ! scope=row style="text-align: left;" | Process pressure
| |
| | 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
| |
| |-
| |
| ! scope=row style="text-align: left;" | Process gasses
| |
| |
| |
| *O<sub>2</sub> (100 sccm)
| |
| *N<sub>2</sub> (100 sccm)
| |
| |
| |
| *O<sub>2</sub> (45 sccm)
| |
| |
| |
| *O<sub>2</sub> (100 sccm)
| |
| *N<sub>2</sub> (100 sccm)
| |
| |
| |
| *O<sub>2</sub>
| |
| *N<sub>2</sub>
| |
| *CF<sub>4</sub>
| |
| |
| |
| *O<sub>2</sub>
| |
| |-
| |
| ! scope=row style="text-align: left;" | Process power
| |
| | 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
| |
| |-
| |
| ! scope=row style="text-align: left;" | Process time
| |
| | 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
| |
| |-
| |
| ! scope=row style="text-align: left;" | Substrate batch
| |
| | 1-25 || 1-2 || 1-25 || 1-25 || 1-25
| |
| |}
| |
|
| |
| <br clear="all" />
| |
| -->
| |
| <!--
| |
| {{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
| |
|
| |
| {{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
| |
|
| |
| {{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
| |
|
| |
| {{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
| |
| -->
| |
| {{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
| |
|
| |
|
| =Decommisioned tools= | | =Decommisioned tools= |
