Specific Process Knowledge/Thin film deposition: Difference between revisions
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===Alloys=== | ===Alloys=== | ||
*[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) | *[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) | ||
*[[/Deposition of NiCr|NiCr]] alloy | |||
=== Polymers === | === Polymers === | ||
Revision as of 08:02, 15 September 2011
Choose material to deposit
Dielectrica
- Silicon Nitride - Silicon nitride and silicon oxynitride
- Silicon Oxide
Metals/elements
|
Period/Group |
IVB | VB | VIB | VIIIB | IB | IIIA | IVA |
| 3 | . | . | . | . | . | 13 Al Aluminium | 14 Si Silicon |
| 4 | 22 Ti Titanium | . | 24 Cr Chromium | 28 Ni Nickel | 29 Cu Copper | . | . |
| 5 | . | . | . | 46 Pd Palladium | 47 Ag Silver | . | 50 Sn Tin |
| 6 | . | 73 Ta Tantalum | 74 W Tungsten | 78 Pt Platinum | 79 Au Gold | . | . |
Alloys
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Lesker - Sputter tool
- PVD co-sputter/evaporation - E-beam evaporator and multiple wafer tool
- Wordentec - E-beam evaporator, sputter and thermal evaporator
- IBE/IBSD Ionfab 300 - Sputter deposition of high quality optical layers and milling/etching
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- Furnace LPCVD Nitride (6") - Deposition of silicon nitride
- B2 Furnace LPCVD Nitride - Deposition of silicon nitride
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition