Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

Revision as of 11:02, 9 August 2011 view source Jml (talk \| contribs) Bureaucrats, danchip, Administrators 1,918 edits →Etching of nanostructures in silicon using the ICP Metal Etcher ← Older edit		Revision as of 11:03, 9 August 2011 view source Jml (talk \| contribs) Bureaucrats, danchip, Administrators 1,918 edits →Etching of nanostructures in silicon using the ICP Metal Etcher Newer edit →
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	===Etching of nanostructures in silicon ~~using the ICP Metal Etcher~~===		=== Etching of nanostructures in silicon ===

	A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are:		A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are: