Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions

@@ Line 156: / Line 156: @@
 A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are:
-; Mask
+; Substrates
-: A ZEP resist mask has been used.
+: A pattern containing 30 nm, 60 nm, 90 nm, 120 nm and 150 nm wide lines has been transferred using E-beam lithography onto three separate batches of 2" wafers (with three different thicknesses of zep resist). In order to make sure that the narrowest features are fully opened they are intentionally over-exposed in the E-beam writer (400 muC/cm2) causing the lines to widen. The resist profiles are:
 *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)]]
 *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/340nmzep|The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)]]
 *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/211nmzep|The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)]]
+The exposed area is very small
+; Substrate mounting
+:
 {| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
@@ Line 343: / Line 345: @@
 | Std. Dev||6||7||3||6||4||5||2||6||9||7||5||2||2
 |-
-! colspan="14" align="center"| Botton curvature
+! colspan="14" align="center"| Bottom curvature
 |-
 | Averages||-9||-6||-9||-11||-9||9||-4||-8||-24||-2||-9||-13||-10