Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
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A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are: | A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are: | ||
; Mask | |||
: A ZEP resist mask has been used. | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)]] | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/nanoetch/180nmzep|The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)]] | ||