Specific Process Knowledge/Etch/ICP Metal Etcher

The ICP Metal Etcher in short

Despite its name the metal etcher doesn't etch metals in general. Currently, the list of metals that you can etch is quite short:

• aluminium
• titanium
• chromium

Over time it is our intention to add other materials to the list such as molybdenum, tungsten, titaniumtungsten, titaniumoxides or piezo-materials such as ZnO. However, currently you are not even allowed to expose other metals to the plasma. To etch other metals use the IBE/IBSD Ionfab 300.

Recipes on the Metal Etcher

Aluminium etch

The aluminium etch has two steps:

Breakthrough

The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.

Main

The main step etches bulk aluminium.

Al etch

Parameter	Process step
	Breakthrough	Main
Time (secs)	20	40 (variable)
HBr (sccm)	-	15
Cl2 (sccm)	20	25
Pressure (mTorr)	4, Strike 3 secs @ 15 mTorr???	1
Coil power (W)	600	500
Platen power (W)	125	100
Temperature (oC)	20	20
Spacers (mm)	30	30

Titanium etch

Ti etch

Parameter	Process 1	Process 2
Cl2 (sccm)	30	30
HBr (sccm)	-	-
Pressure (mTorr)	3, Strike 3 secs @ 15 mTorr???	3
Coil power (W)	800	900
Platen power (W)	100	50
Temperature (oC)	20	20
Spacers (mm)	30	30
Etch rate (nm/min)	152	64
AZ resist selectivity	0.67	0.83

Chromium etch

The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.

Cr etch

Parameter	Cr etch
Cl2 (sccm)	65
O2 (sccm)	15
Pressure (mTorr)	15
Coil power (W)	500
Platen power (W)	15
Temperature (oC)	50 (no back side cooling)
Spacers (mm)	100
Etch rate (nm/min)	~40
Zep520A resist selectivity	~0.9

Etching of nanostructures in silicon using the ICP Metal Etcher

A series of experiments with etching nanostructures in silicon has been carried out. The common process parameters are:

Mask

A ZEP resist mask has been used.

• The 180 nm zep resist profiles (Wafer WF_2B1_feb06_2011)
• The 340 nm zep resist profiles (Wafer WF_2C1_feb2011)
• The 211 nm zep resist profiles (Wafer WF_2E02_mar23_2011)

Recipe Sinano	3.0	3.1	3.2	3.3	3.4	4.0	3.5	3.6	3.3	3.7	3.31	3.31	3.32
Cl2 (sccm)	0	0	0	0	0	20	15	15	0	0	0	0	0
BCl3 (sccm)	5	3	5	5	5	0	5	5	5	5	5	5	5
HBr (sccm)	15	17	15	15	15	0	0	0	15	15	15	15	15
Coil power (W)	900 L	900 F	900 F	900 F	900 F	900 L	900 L	900 F	900 F	900 L	900 F	900 F	900 F
Platen power (W)	50	50	60	75	90	60	60	60	75	60	75	75	30
Pressure (mtorr)	2	2	2	2	2	2	5	10	2	10	2	2	2
Temperature (oC)	20	20	20	20	20	20	20	20	20	50	50	50	50
Spacers (mm)	100	100	100	100	100	100	100	100	100	100	100	30	100
Process time (s)	150	180	120	180	120	90	120	180	300	180	180	180	180
Etch rates (nm/min)
Averages	311	104	92	105	116	169	108	79	101	66	91	98	59
Std. Dev	44	15	15	21	22	9	11	31	29	4	28	18	12
Zep etch rate (nm/min)
		30	40	51	67			45	59		53	36	19
Sidewall angle (degrees)
Averages	82	82	82	82	82	84	81	83	83	85	80	83	79
Std. Dev	2	2	1	1	1	1	1	2	2	1	3	2	2
CD loss (nm pr edge)
Averages	65	-11	-15	-2	-11	67	63	-29	-5	-29	10	-14	-17
Std. Dev	30	5	2	4	3	29	27	6	5	8	7	8	10
Bowing (nm)
Averages	31	31	15	6	5	22	12	15	28	13	25	1	-2
Std. Dev	6	7	3	6	4	5	2	6	9	7	5	2	2
Botton curvature
Averages	-9	-6	-9	-11	-9	9	-4	-8	-24	-2	-9	-13	-10
Std. Dev	22	19	19	11	7	17	15	15	12	15	13	17	18

• Nanoetch on DRIE-Pegasus
• 1 - the first nanoetch