Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing: Difference between revisions

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 *Dry oxidation: 50 Å  to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker oxide layer)
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-!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
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 *Vacuum: Room temperature - 1050 <sup>o</sup>C
 *Standby: Down to room temperature
+|-
+|style="background:LightGrey; color:black"|Process time
+|style="background:WhiteSmoke; color:black"|
+*Maximum 3 hours at 1050 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
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 |style="background:LightGrey; color:black"|Gases on the system
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub>: 20 slm
+Atmospheric pressure:
+*N<sub>2</sub>: 20 slm - Maximum 10 SLM recommended (to protect the heaters)
 *O<sub>2</sub>: 10 slm
 *H<sub>2</sub>: 5 slm - Not allowed
 *N<sub>2</sub> mix : 10 slm (for forming gas H<sub>2</sub>-N<sub>2</sub> gas mixture) - Not tested and not allowed for vacuum processes
+Vacuum:
+*N<sub>2</sub>: 2 slm
+*O<sub>2</sub>: 2 slm
+*H<sub>2</sub>: Not allowed
+*N<sub>2</sub> mix : Not allowed
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates