Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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*Any size and number that can go inside the beaker in use | *Any size and number that can go inside the beaker in use | ||
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*<nowiki>#</nowiki>1 200mm wafer | *<nowiki>#</nowiki>1 200mm wafer | ||
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Etching of Chromium
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Chromium Etch Methods
| Cr wet etch | ICP metal | IBE (Ionfab300+) | |
|---|---|---|---|
| Generel description | Wet etch of Cr premixed (Chrome etch 18) | Dry plasma etch of Cr | Sputtering of Cr - pure physical etch |
| Etch rate range |
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| Etch profile |
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| Substrate size |
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Smaller pieces glued to carrier wafer
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| Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
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Comparison of Chromium Etch Methods
| Cr wet etch | ICP metal | IBE (Ionfab300+) | DRIE-Pegasus 2 | |
|---|---|---|---|---|
| General description | Wet etch of Cr premixed (Chrome etch 18) | Dry plasma etch of Cr | Sputtering of Cr - pure physical etch | Primarily shallow etching of silicon but also thin layers of SiO2, TaO2 and Cr |
| Etch rate range |
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|
|
|
| Etch profile |
|
|
|
|
| Substrate size |
|
|
Smaller pieces glued to carrier wafer
|
|
| Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
|
|