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Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions

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Line 42: Line 42:
! poly2
! poly2
|   
|   
|  
| standard resists, PI PMMA
| 20
| 20
| 0
| 0
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! poly3
! poly3
|   
|   
|  
| BCB
| 43
| 43
| 0
| 0
| 43
| 7
| 0
| 0
| 4
| 4
Line 66: Line 66:
| A good start point for PDMS / Ormocer-type Si/ inorganic-containing polymers.  The SF<sub>6</sub>/O<sub>2</sub> ratio will depend on the composition of the polymer.
| A good start point for PDMS / Ormocer-type Si/ inorganic-containing polymers.  The SF<sub>6</sub>/O<sub>2</sub> ratio will depend on the composition of the polymer.
|-
|-
|}
|}
        BCB:  7 SF6, 43 O2, 4 mT,  800W, 150W, 20 degrees C. 
An alternative chemistry for standard resists,PI,  PMMA is 20 O2, 20 He, 3 mT, 600W, 150 W, 10 degrees C.  This will give higher etch rates &  better selectivities, but slightly more bowed profiles
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