Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
| Line 118: | Line 118: | ||
*TEOS oxide from furnace: 300nm etched in 11 min | *TEOS oxide from furnace: 300nm etched in 11 min | ||
jemafh@nilt 2019-Marts: | jemafh@nilt 2019-Marts: | ||
*Standard from PECVD3: selectivity 1:100 to Si | *Standard from PECVD3: selectivity 1:100 to Si(100) | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
. | . | ||