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! style="background:silver; color:black" colspan="4" align="center"| [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]]
! style="background:silver; color:black" colspan="4" align="center"| [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasi]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
! style="background:silver; color:black" rowspan="2"  align="center"| [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]]
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| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides on 6" wafers
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!  
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo. Please do not use this machine with F-chemistry unless the Dry Etch group has allowed it!  
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs.
Etching of SiO2 and SiN on III-V materials  
Etching of SiO2 and SiN on III-V materials  
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| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" | Barc etch
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" colspan="2"|  
| style="background:lightgrey; color:black" colspan="2"|  
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |
| style="background:lightgrey; color:black" |
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| style="background:WhiteSmoke; color:black" colspan="4" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" colspan="4" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Ion beam etcher - sputter etches with argon ions
| style="background:WhiteSmoke; color:black" | Ion beam etcher - sputter etches with argon ions
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| style="background:lightgrey; color:black" colspan="4" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C  
| style="background:lightgrey; color:black" colspan="4" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 5<sup>o</sup>C to 60?<sup>o</sup>C  
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| style="background:WhiteSmoke; color:black" colspan="3" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" colspan="3" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)<br> Wafer size 6"
| style="background:WhiteSmoke; color:black" | No clamping<br> Sample size up to 4"
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers)<br> Wafer size 4"
| style="background:WhiteSmoke; color:black" | Mechanical clamping <br> Wafer sizes 2"/4"/6"/8"
| style="background:WhiteSmoke; color:black" | Mechanical clamping <br> Wafer sizes 2"/4"/6"/8"
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| HBr
| HBr


|}
| style="background:lightgrey; color:black" |
{|
| O<sub>2</sub>
| CHF<sub>3</sub>
| CH<sub>4</sub>
|-
| Ar
| H<sub>2</sub>
|}
|}
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
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* Coil generator
* Coil generator
* Platen generator
* Platen generator
|  style="background:WhiteSmoke; color:black" |
* RF generator
|  style="background:WhiteSmoke; color:black" |  
|  style="background:WhiteSmoke; color:black" |  
* Coil generator
* Coil generator
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| style="background:lightgrey; color:black" colspan="2"| Loading via two cassette loading stations pumped down at vacuum
| style="background:lightgrey; color:black" colspan="2"| Loading via two cassette loading stations pumped down at vacuum
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Manual loading directly into process chamber
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
| style="background:lightgrey; color:black" | Automatic loading via load lock
| style="background:lightgrey; color:black" | Automatic loading via load lock
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* Parameter ramping
* Parameter ramping
* Optical endpoint detection
* Optical endpoint detection
|  style="background:WhiteSmoke; color:black" |
* Laser endpoint detection
|  style="background:WhiteSmoke; color:black" |  
|  style="background:WhiteSmoke; color:black" |  
* Parameter ramping
* Parameter ramping
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* Al, Cr, Ti, W, Mo, Nb
* Al, Cr, Ti, W, Mo, Nb
* Resists
* Resists
| style="background:lightgrey; color:black" |
* Silicon, Silicon oxide, silicon nitride
* Fused silica
* Sapphire
* SiC
* GaAs, GaN, InP, with epitaxial layers
* Resists (at low temperature processing)
| style="background:lightgrey; color:black" |  
| style="background:lightgrey; color:black" |  
* Silicon, Silicon oxide, silicon nitride
* Silicon, Silicon oxide, silicon nitride
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| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=456 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=266 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=155 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=268 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link]
| style="background:WhiteSmoke; color:black" | [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=267 Link]
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|-
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