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==Equipment performance and process related parameters==
==Equipment performance and process related parameters==


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
{| class="wikitable"
 
|-
 
! scope=row style="text-align: left;" | Purpose
!style="background:silver; color:black;" align="center" width="60"|Purpose  
| Alignment and UV exposure
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-
|-
 
! scope=row style="text-align: left;" | Exposure modes
!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
|  
 
*Vacuum contact
|style="background:LightGrey; color:black"|Exposure mode
*Hard contact
|style="background:WhiteSmoke; color:black" colspan="2"|
*Soft contact
vacuum contact, hard contact, soft contact, proximity, flood exposure
*Proximity
*Flood exposure
|-
|-
| style="background:LightGrey; color:black"|Exposure light/filters
! scope=row style="text-align: left;" | Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
*365 nm (i-line)
*365 nm (i-line)
*broadband (i-, g-, h-line), requires tool change
*broadband (i-, g-, h-lines), requires tool change
*(303 nm, requires tool change)
*303 nm, requires tool change
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
! scope=row style="text-align: left;" | Minimum resolution
|style="background:WhiteSmoke; color:black" colspan="2"|
| ~1.25 µm
down to 1.25µm
|-
|-
|style="background:LightGrey; color:black"|Mask size
! scope=row style="text-align: left;" | Mask size
|style="background:WhiteSmoke; color:black" colspan="2"|
| 5x5 inches
*5x5 inch
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
! scope=row style="text-align: left;" | Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|  
*Top side (TSA), ±2µm
*Top side (TSA): ±2 µm
*Backside (BSA), ±5µm
*Back side (BSA): ±5 µm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate size
|style="background:LightGrey; color:black"|Substrate size
|  
|style="background:WhiteSmoke; color:black" colspan="2"|
*Mask exposure and alignment: 100 mm wafers
Mask exposure and alignment:
*Flood exposure: from samples to 150 mm wafers
* 100 mm wafers
Flood exposure:
* samples up to 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
| All PolyFabLab allowed materials
All PolyFabLab materials
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Substrate batch
|style="background:WhiteSmoke; color:black" colspan="2"|
| 1
1  
|-
|}
|}
<br clear="all" />
<br clear="all" />

Revision as of 14:29, 25 June 2026

Aligner: MA6-1

The Aligner: MA6-1 is located in PolyFabLab.

SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.


Training videos:
The training videos were made for MA6-2, but operation of MA6-1 is very similar as they are exactly the same model. Due to a different power supply, however, procedures for ignition and intensity control of the lamp is different for MA6-1. Please refer to the manual for the correct procedures.

Operation

Alignment

The user manual(s), quality control procedure(s) and results, and contact information can be found in LabManager - requires login

Exposure dose

Information on UV exposure dose

Process information

The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.

Link to information about alignment mark design and locations.


Equipment performance and process related parameters

Purpose Alignment and UV exposure
Exposure modes
  • Vacuum contact
  • Hard contact
  • Soft contact
  • Proximity
  • Flood exposure
Exposure light/filters
  • 365 nm (i-line)
  • broadband (i-, g-, h-lines), requires tool change
  • 303 nm, requires tool change
Minimum resolution ~1.25 µm
Mask size 5x5 inches
Alignment modes
  • Top side (TSA): ±2 µm
  • Back side (BSA): ±5 µm
Substrate size
  • Mask exposure and alignment: 100 mm wafers
  • Flood exposure: from samples to 150 mm wafers
Allowed materials All PolyFabLab allowed materials
Substrate batch 1


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