Specific Process Knowledge/Lithography/UVExposure/aligner MA6-1: Difference between revisions
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==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
{| | {| class="wikitable" | ||
|- | |||
! scope=row style="text-align: left;" | Purpose | |||
| Alignment and UV exposure | |||
| | |||
Alignment and UV exposure | |||
|- | |- | ||
! scope=row style="text-align: left;" | Exposure modes | |||
!style=" | | | ||
*Vacuum contact | |||
*Hard contact | |||
*Soft contact | |||
*Proximity | |||
*Flood exposure | |||
|- | |- | ||
! scope=row style="text-align: left;" | Exposure light/filters | |||
| | |||
*365 nm (i-line) | *365 nm (i-line) | ||
*broadband (i-, g-, h- | *broadband (i-, g-, h-lines), requires tool change | ||
* | *303 nm, requires tool change | ||
|- | |- | ||
! scope=row style="text-align: left;" | Minimum resolution | |||
| | | ~1.25 µm | ||
|- | |- | ||
! scope=row style="text-align: left;" | Mask size | |||
| | | 5x5 inches | ||
|- | |- | ||
! scope=row style="text-align: left;" | Alignment modes | |||
| | |||
*Top side (TSA) | *Top side (TSA): ±2 µm | ||
* | *Back side (BSA): ±5 µm | ||
|- | |- | ||
!style=" | ! scope=row style="text-align: left;" | Substrate size | ||
| | |||
*Mask exposure and alignment: 100 mm wafers | |||
Mask exposure and alignment: | *Flood exposure: from samples to 150 mm wafers | ||
Flood exposure: | |||
|- | |- | ||
! scope=row style="text-align: left;" | Allowed materials | |||
| | | All PolyFabLab allowed materials | ||
All PolyFabLab materials | |||
|- | |- | ||
! scope=row style="text-align: left;" | Substrate batch | |||
| | | 1 | ||
1 | |||
|} | |} | ||
<br clear="all" /> | <br clear="all" /> | ||