Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Au etch: Difference between revisions

Revision as of 10:49, 5 January 2012

Acceptance test for Au etch:

.	Acceptance Criteria	Acceptance Results
Substrate information	50 mm SSP Si wafer 525 µm thick Supplied by Danchip	.
Material to be etched	E-beam deposited Au	.
Mask information	E-beam resist mask: 400nm of spin coated ZEP520A e-beam resist Patterned by E-beam lithography	.
Features to be etched	300nm - 3µm dots and lines + a square of 200µmx200µm	.
Etch depth	300nm	~272 nm
Etch rate	>80nm/min	54.5nm/min +- 0.6nm/min (one standard deviation)
Etch rate uniformity	<+-2%	+-(0.2% +-0.2%)
Reproducibility	<+-2%	+-0.9%
Selectivity (Au etch rate/ZEP etch rate)	At least 1:1	1.2:1
Etch profile	70-90dg.	75dg

s18-Au-ZEP3	s18-Au-ZEP5

@@ Line 68: / Line 68: @@
 *75dg
 |}
+====Process parameters for the acceptance test====
+{| border="2" cellspacing="2" cellpadding="3"
+!Parameter
+!Au etch acceptance
+|-
+|Neutalizer current [mA]
+|550
+|-
+|RF Power [W]
+|1300
+|-
+|Beam current [mA]
+|500
+|-
+|Beam voltage [V]
+|600
+|-
+|Beam accelerator voltage
+|400
+|-
+|Ar flow to neutralizer [sccm]
+|5.0
+|-
+|Ar flow to beam [sccm]
+|10.0
+|-
+|Rotation speed [rpm]
+|20
+|-
+|Stage angle [degrees]
+|30
+|-
+|}