Jump to content

Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners: Difference between revisions

Jehem (talk | contribs)
No edit summary
Tag: Manual revert
Jehem (talk | contribs)
No edit summary
 
Line 1: Line 1:
==Exposure dose for mask aligners==
=Exposure dose for mask aligners=
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.


Line 5: Line 5:




===Aligner: MA6-1===
==Aligner: MA6-1==
The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.
The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.


Line 48: Line 48:
<br clear="all" />
<br clear="all" />


===Aligner: MA6-2===
==Aligner: MA6-2==
The Aligner: MA6-2 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.
The Aligner: MA6-2 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm.