Specific Process Knowledge/Lithography/UVExposure/aligner MA6-2: Difference between revisions
Created page with "==Aligner: MA6-2== 400px|thumb|The Aligner: MA6-2 is located in E-4. The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microsc..." |
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===Exposure dose=== | ===Exposure dose=== | ||
[[Specific Process Knowledge/Lithography/Resist#Aligner:_MA6-2|Information on UV exposure dose]] | [[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-2|Information on UV exposure dose]] | ||
===Process information=== | ===Process information=== | ||
