Specific Process Knowledge/Etch/Etching of Bulk Glass: Difference between revisions
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The set-up consists of a 5L plasic beaker placed on a stirring plate (magnetic stirring) and a special horizontal wafer holder. Normally a 40% pre-mixed HF solution is used. | The set-up consists of a 5L plasic beaker placed on a stirring plate (magnetic stirring) and a special horizontal wafer holder. Normally a 40% pre-mixed HF solution is used. | ||
Masking materials and pre-treatment of the glass surface prior to the deposition of the masking material is a special concern in particular for deep | Masking materials and pre-treatment of the glass surface prior to the deposition of the masking material is a special concern in particular for deep etches (> 10µm). | ||
Due to the high cleanliness fused silica is allowed access to basically all machines meaning that e.g. LPCVD silicon can be deposited as masking material. This is an excellent mask even for quite deep etchings. | Due to the high cleanliness fused silica is allowed access to basically all machines meaning that e.g. LPCVD silicon can be deposited as masking material. This is an excellent mask even for quite deep etchings. |
Revision as of 07:37, 9 August 2011
Ething of Glass can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with AOE using Flourine chemistry (only fused silica) or with IBE by sputtering with Ar ions and/or using Flourine chemistry.
At Danchip, we have two types of bulk glass substrates: Borosilicate glass (Borofloat 33 (like pyrex)) and fused silica glass which in cleanliness is similar to quartz. Both types are etched wet in a special set-up placed in a fumehood using a strong HF-solution (isotropic etch). The set-up consists of a 5L plasic beaker placed on a stirring plate (magnetic stirring) and a special horizontal wafer holder. Normally a 40% pre-mixed HF solution is used.
Masking materials and pre-treatment of the glass surface prior to the deposition of the masking material is a special concern in particular for deep etches (> 10µm).
Due to the high cleanliness fused silica is allowed access to basically all machines meaning that e.g. LPCVD silicon can be deposited as masking material. This is an excellent mask even for quite deep etchings.
Regarding borosilicate glass masking is more tricky. The following sequence has been used with some success (using sputtered silicon from the Alcatel):
- Piranha clean
- Bake-out at 250 oC (>2.5 hours)
- Plasma ashing
- Sputter-deposit in Alcatel: Power: 550W, Ar-pressure: 10 mbar (base pressure: 10 mbar)
- Patterning of the silicon using either wet (poly-etch) or dry etching
Process Advice
Overview: Wet HF-etch of bulk glass
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Possible masking materials |
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Etch rate |
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Uniformity |
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Batch size |
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Size of substrate |
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Allowed materials |
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