Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions

Revision as of 14:31, 18 October 2012

Ething of Titanium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with ICP using Chlorine chemistry or with IBE by sputtering with Ar ions.

Wet etching of Titanium

Fume hood: positioned in cleanroom 2.
Wet Etch of Titanium can take place in this pp tank or in a beaker in this fume hood

We have two solutions for wet titanium etching:

BHF
Cold RCA1

Do it by making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. BHF etching can also take place in the PP-etch bath in the fume hood in cleanroom 2.

Comparing the two solutions

	BHF	Cold RCA1
General description	Etch of titanium with or without photoresist mask.	Etch of titanium (as stripper or with eagle resist).
Chemical solution	HF:NH₄F	NH₃OH:H₂O₂:H₂O - 1:1:5
Process temperature	Room temperature	Room temperature
Possible masking materials	Photoresist (1.5 µm AZ5214E)	Eagle resist
Etch rate	Not known (it bubbles while etching)	Not known
Batch size	1-5 4" in beaker 1-25 wafers at a time in PP-etch bath	1-5 4" wafer at a time
Etch bath	Beaker or PP-etch bath in the fume hood in cleanroom 2.	Beaker
Allowed materials	No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2. Make a note on the beaker of which materials have been processed.	No restrictions when used in beaker. Make a note on the beaker of which materials have been processed.

Dry etching of titanium

See the ICP Metal Etch page.

@@ Line 25: / Line 25: @@
 |-
 |'''Chemical solution'''
-|HF:NH<math>_4</math>F
+|HF:NH<sub>4</sub>F
-|NH<math>_3</math>OH:H<math>_2</math>O<math>_2</math>:H<math>_2</math>O - 1:1:5
+|NH<sub>3</sub>OH:H<sub>2</sub>O<sub>2</sub>:H<sub>2</sub>O - 1:1:5
 |-
 |'''Process temperature'''
@@ Line 66: / Line 66: @@
 |-
 |}
 == Dry etching of titanium ==
 See the [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]] page.