Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
Appearance
No edit summary |
|||
| Line 26: | Line 26: | ||
Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used. | Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used. | ||
== | == GaAs substrate etching == | ||
When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers. | When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers. | ||