Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]''' | ||
[[Category: Equipment|Etch Wet III-V]] | [[index.php?title=Category:Equipment|Etch Wet III-V]] | ||
[[Category: Etch (Wet) bath|III-V]] | [[index.php?title=Category:Etch (Wet) bath|III-V]] | ||
This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager: | This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager: | ||
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*[[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | *[[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | ||
*[[Specific Process Knowledge/Etch/III-V RIE|III-V RIE - Plassys]] (will be decommissioned October 2025) | *[[Specific Process Knowledge/Etch/III-V RIE|III-V RIE - Plassys]] (will be decommissioned October 2025) | ||
== InP or GaAs substrate etching == | == InP or GaAs substrate etching == | ||
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The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC. | The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC. | ||
==More info regarding etching of III-V materials== | |||
More info on etching of III-V materials (not Nanolab results) can be found here: | |||
https://wiki.nanofab.ucsb.edu/wiki/Wet_Etching_Recipes | |||
and | |||
https://www.sciencedirect.com/science/article/pii/S0927796X00000279 | |||