Specific Process Knowledge/Etch/ICP Metal Etcher: Difference between revisions
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===Chromium etch=== | ===Chromium etch=== | ||
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | |||
|+ '''Cr etch''' | |||
|- | |||
! Parameter | |||
! width="200" | Cr etch | |||
|- | |||
! Cl<sub>2</sub> (sccm) | |||
| - | |||
|- | |||
! HBr (sccm) | |||
| - | |||
|- | |||
! Pressure (mTorr) | |||
| -, Strike 3 secs @ 15 mTorr??? | |||
|- | |||
! Coil power (W) | |||
| - | |||
|- | |||
! Platen power (W) | |||
| - | |||
|- | |||
! Temperature (<sup>o</sup>C) | |||
| 50 | |||
|- | |||
! Spacers (mm) | |||
| 100 | |||
|- | |||
! Etch rate (nm/min) | |||
| ¨40 | |||
|- | |||
!Zep520A resist selectivity | |||
| ~0.9 | |||
|- | |||
|} | |||
==Etching of nanostructures in silicon using the ICP Metal Etcher== | ==Etching of nanostructures in silicon using the ICP Metal Etcher== | ||