Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8"): Difference between revisions
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*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub> | *Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub> | ||
*Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system. | *Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system. | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
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*Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | *Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
*Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C) | *Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/E1 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||