Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
| Line 73: | Line 73: | ||
*Silicon wafers | *Silicon wafers | ||
*Silicon wafers with layers of silicon oxide or silicon nitride | *Silicon wafers with layers of silicon oxide or silicon nitride | ||
*Wafers from the | *Wafers from the A1, A3, B-stack, C1 and E1 stack furnaces | ||
*Wafers from PECVD4 | *Wafers and samples from PECVD4 | ||
*Wafers from PECVD3 (without any | *Wafers and samples from PECVD3 (without any metals) | ||
*Wafers from Wafer Bonder 02 ( | *Wafers from Wafer Bonder 03 | ||
*Wafers from Wafer Bonder 02 (without any metals). Use new or dedicated teflon sheets in the wafer bonder | |||
|- | |- | ||
|} | |} | ||