Specific Process Knowledge/Lithography/EBeamLithography/HSQ Dose Test: Difference between revisions
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SEM images were recorded and analyzed from the structure shown below: | SEM images were recorded and analyzed from the structure shown below: | ||
[[File:design.png|frameless|383x383px|left]] | [[File:design.png|frameless|383x383px|left]] | ||
Revision as of 14:30, 9 September 2025
Resist info
- we used a 10 % HSQ resist for a dose test. The resist info sheet could be found her.
- spinning: in labspin 3000rpm for 40s with 2s ramp (1500 acceleration) then bake for 2 min at 165 C
- Exposure: At 12nA ap6 (spot size 10 nm) in JEOL 9500
- Dose test with structures (3x3)
- Develop for 90s using manual TMAH developer
- Optical and SEM images and analysis
Results
Below is overview optical images of the developed pattern:
SEM images were recorded and analyzed from the structure shown below:
The measured and designed critical dimension are plotted vs the doses below:
The line width roughness (LWR) is plotted vs CD below:
.