Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions

Revision as of 11:43, 5 July 2011

The 100 mm wafers had an Al mask made by lift-off:

**Process C recipe**
Parameter	Etch
Gas flow (sccm)	SF₆ 38 C₄F₈ 70
Process time (mm:ss)	01:30
Pressure (mtorr)	4
Coil power (W)	450
Platen power (W)	100
Common	Temperature 10 degs, HBC 10 torr, long funnel, with baffle & 100 mm spacers

@@ Line 8: / Line 8: @@
 {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
-|+ '''Process A specifications'''
+|+ '''Process C specifications'''
 |-
 ! Parameter
@@ Line 52: / Line 52: @@
 {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
-|+ '''Process A recipe'''
+|+ '''Process C recipe'''
-|-
-!
-! colspan="2" | Step 1
-! colspan="2" | Step 2
 |-
 ! width="120" | Parameter
 ! width="120" | Etch
-! width="120" | Dep
-! width="120" | Etch
-! width="120" | Dep
 |-
 ! Gas flow (sccm)
-| SF<sub>6</sub> 350 (1.5 s) 550
+| SF<sub>6</sub> 38 C<sub>4</sub>F<sub>8</sub> 70
-| C<sub>4</sub>F<sub>8</sub> 200
-| SF<sub>6</sub> 350 (1.5 s) 550
-| C<sub>4</sub>F<sub>8</sub> 200
 |-
-! Cycle time (secs)
+! Process time (mm:ss)
-| 7.0
+| 01:30
-| 4.0
-| 7.0
-| 4.0
 |-
 ! Pressure (mtorr)
-| 25 (1.5 s) 90 >> 150
+| 4
-| 25
-| 25 (1.5 s) 150
-| 25
 |-
 ! Coil power (W)
-| 2800
+| 450
-| 2000
-| 2800
-| 2000
 |-
 ! Platen power (W)
-| 120 >> 140 (1.5) 45
+| 100
-| 0
-| 140 (1.5) 45
-| 0
-|-
-! Cycles
-| colspan="2" | 11 (keep fixed)
-| colspan="2" | 44 (vary this)
 |-
 ! Common
-| colspan="4" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
+| colspan="4" | Temperature 10 degs, HBC 10 torr, long funnel, with baffle & 100 mm spacers
 |}