Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
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== Process B == | |||
Process B is labelled Via (30μm diameter) 100μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load. | |||
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" | ||
|+ '''Process B specifications''' | |+ '''Process B specifications''' | ||