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Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions

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== Process B ==
Process B is labelled Via (30μm diameter) 100μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process B specifications'''
|+ '''Process B specifications'''