Specific Process Knowledge/Etch/DRIE-Pegasus/processB: Difference between revisions
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== Process B == | |||
Process B is labelled Via (30μm diameter) 100μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load. | |||
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Revision as of 11:59, 26 November 2012
Process B
Process B is labelled Via (30μm diameter) 100μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
| Parameter | Specification | Average result |
|---|---|---|
| Etch rate (µm/min) | > 10 | 10.7 |
| Etched depth (µm) | 100 | 107 |
| Scallop size (nm) | < 800 | 685 |
| Profile (degs) | 91 +/- 1 | 90.7 |
| Selectivity to AZ photoresist | > 100 | 183 |
| Undercut (µm) | <1.5 | 0.89 |
| Uniformity (%) | < 3.5 | 2.7 |
| Repeatability (%) | <4 | 0.47 |
| Main etch (D->E) | Etch | Dep |
|---|---|---|
| Gas flow (sccm) | SF6 350 O2 35 | C4F8 200 |
| Cycle time (secs) | 7.0 | 4.0 |
| Pressure (mtorr) | 20 (1.5 s) 100 | 25 |
| Coil power (W) | 2800 | 2000 |
| Platen power (W) | 130 (1.5) 40 | 0 |
| Cycles | 55 (process time 10:05) | |
| Common | Temperature 10 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers | |