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New page: {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;" |+ '''Process A specifications''' |- ! Parameter ! Specification ! Average result |- ! Etch rate (µm/min) | > 1...
 
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The 100 mm wafers had an Al mask made by lift-off:
# 80 nm of spin coated ZEP520A E-beam resist
# Patterned by E-beam lithograph
# 20 nm Al deposited and patterned by lift-off
# ~ 99 % etch load
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process A specifications'''
|+ '''Process A specifications'''
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|-
|-
! Etch rate (µm/min)   
! Etch rate (µm/min)   
| > 15
| Not specified
| 18.9
|  
|-
|-
! Etched depth (µm)
! Etched depth (µm)
| 150
| 300
| 189.1
|  
|-
|-
! Scallop size (nm)
! Scallop size (nm)
| < 800
| < 30
| 718
|  
|-
|-
! Profile (degs)
! Profile (degs)
| 91 +/- 1
| 85 +/- 5
| 91.1
|  
|-
|-
! Selectivity to AZ photoresist
! Selectivity to resist
| > 150
| Not speicified
| 310
|  
|-
|-
! Undercut (µm)
! Undercut (nm)
| <1.5
| < 30
| 0.84
|  
|-
|-
! Uniformity (%)
! Uniformity (%)
| < 3.5
| < 3.5
| 3.0
|  
|-
|-
! Repeatability (%)
! Repeatability (%)
| <4
| <4
| 0.43
|  
|-
|-
|}
|}
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