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Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions

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=== Process A ===
=== Process A ===


Process A is labelled ''Large trench (80μm wide) 150μm depth''. In the acceptance test the process was run on a 150 mm wafer with 12-13 % etch load. The tables below show
Process A is labelled ''Large trench (80μm wide) 150μm depth''. In the acceptance test the process was run on a 150 mm wafer with 12-13 % etch load.  
* The specifications and the results achieved
* The recipe


{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
[[Specific Process Knowledge/Etch/DRIE-Pegasus/processA|Process A: Recipe, specifications and results]]
|+ '''Process A specifications'''
|-
! Parameter
! Specification
! Average result
|-
! Etch rate (µm/min) 
| > 15
| 18.9
|-
! Etched depth (µm)
| 150
| 189.1
|-
! Scallop size (nm)
| < 800
| 718
|-
! Profile (degs)
| 91 +/- 1
| 91.1
|-
! Selectivity to AZ photoresist
| > 150
| 310
|-
! Undercut (µm)
| <1.5
| 0.84
|-
! Uniformity (%)
| < 3.5
| 3.0
|-
! Repeatability (%)
| <4
| 0.43
|-
|}
 
 
 
 
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process A recipe'''
|-
!
! colspan="2" | Step 1
! colspan="2" | Step 2
|-
! width="120" | Parameter 
! width="120" | Etch
! width="120" | Dep
! width="120" | Etch
! width="120" | Dep
|-
! Gas flow (sccm)
| SF<sub>6</sub> 350 (1.5 s) 550
| C<sub>4</sub>F<sub>8</sub> 200
| SF<sub>6</sub> 350 (1.5 s) 550
| C<sub>4</sub>F<sub>8</sub> 200
|-
! Cycle time (secs)
| 7.0
| 4.0
| 7.0
| 4.0
|-
! Pressure (mtorr)
| 25 (1.5 s) 90 >> 150
| 25
| 25 (1.5 s) 150
| 25
|-
! Coil power (W)
| 2800
| 2000
| 2800
| 2000
|-
! Platen power (W)
| 120 >> 140 (1.5) 45
| 0
| 140 (1.5) 45
| 0
|-
! Cycles 
| colspan="2" | 11 (keep fixed)
| colspan="2" | 44 (vary this)
|-
! Common
| colspan="4" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
|}


== Nanoetching ==
== Nanoetching ==