Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test: Difference between revisions
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== Ion source == | == Ion source == | ||
We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub>. The etch rate | We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub> at the acceptance test in 2028. The etch rate was strongest in the center, about 15-20% higher than at the edges of a 6" wafer. | ||
The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches. | The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches. | ||
In 2025 we tested the ion source again for SiO<sub>2</sub> using the standard recipe called "ion_etch_Stephen". We found very good agreement with our previous results: | |||
The etch rate was 0.9 +/- 0.1 nm/min for one batch and 1.1 +/- 0.1 nm/min for a second batch (based on measurement of SiO2 layers before and after a total etch of 4 minutes to improve the ability to measure the difference with ellipsometry). Wafer-to-wafer variation was around 2 % within the same batch. Again the etch was strongest in the center with ~10-15 % higher etch rate in the center than at the edge of the wafer. So while the etch rate at the edge was 1 nm/min, the rate at the center was 1.1 nm/min more or less. | |||
== Vacuum performance == | == Vacuum performance == | ||