Specific Process Knowledge/Thin film deposition/Deposition of Tantalum Nitride: Difference between revisions
Created page with "{{cc-nanolab}} '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum_Nitride&action=submit click here]''' =Tantalum Nitride (TaN<sub>x</sub>)= Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness,..." |
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== Deposition of Tantalum Nitride == | == Deposition of Tantalum Nitride == | ||
Deposition of | Deposition of TaN<sub>x</sub> can only be done by reactive sputtering using W target. | ||
The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]]." The operating process is described in detail.: | The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]]." The operating process is described in detail.: | ||