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Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions

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Two recipes have been optimized for the ASE. Their specification is on a 10 % etch load wafer with trenches.
Two recipes have been optimized for the ASE. Their specification is on a 10 % etch load wafer with trenches.
* '''Shallolr''': The shallow etch process will etch a 2 <math>\mu</math>m opening down to make a 20 <math>\mu</math>m trench.
* '''Shallolr''': The shallow etch process will etch a 2 µm opening down to make a 20 µm trench.
* '''Deepetch''': The deep etch process will etch a 50 <math>\mu</math>m opening down to make a 300 <math>\mu</math>m trench.
* '''Deepetch''': The deep etch process will etch a 50 µm opening down to make a 300 µm trench.
The standardization procedure on the ASE covers these two etches.  
The standardization procedure on the ASE covers these two etches.


== Recipes on the ASE ==
== Recipes on the ASE ==